Extraction of Mobility Degradation and Source-and-Drain Resistance in MOSFETs
نویسندگان
چکیده
1Solid-State Electronics Laboratory, Simón Bolívar University, Caracas 1080, Venezuela. 2Powerchip Semicond. Corp., Hsinchu Science-Based Industrial Park, Hsinchu, Taiwan, ROC 3School of Electrical Engineering and Computer Science,| University of Central Florida, Orlando, FL 32816-2450, USA. 4Department of ISEE, Zhejiang University, Hangzhou, China, 5Department of Electrical Engineering, Centro Universitário da FEI, Av. Humberto de Alencer Castelo Branco, 3972, CEP 09850-901 – São Bernardo do Campo, São Paulo, Brazil. e-mail: [email protected]
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تاریخ انتشار 2010